Cross section of a TSV (Through Silicon Via) was prepared using BIB (Broad Ion Beam) milling system and the crystal orientation of Cu embedded in the TSV was analyzed by EBSD (electron backscatter diffraction). While the BSE image visualized each grain by channeling contrast, the EBSD map revealed that the grain sizes in the upper part are smaller than those in the lower part. Even fine grains of several tens of nm were identified at higher magnification. #TSV #ThroughSiliconVia #CrystalOrientat
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